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GE FANUC VMIVME-5565-010: Advanced Reflective Memory Node Card

The GE FANUC VMIVME-5565-010 Reflective Memory Node Card is a high-performance, reflective memory node designed for advanced industrial control systems. It ensures efficient data processing and reliable communication within complex network architectures.

Manufacturer:GE FANUC

Model:VMIVME-5565-010

Technology:Reflective Memory

Form Factor:VMEbus

Memory Capacity:Variable

Bus Interface:PCI/PCIe

Operating Temperature Range:-40°C to +85°C

Operating Humidity Range:5% to 95% non-condensing

Power Consumption:Less than 15W

Reliability Rating:MTBF > 200,000 hours

Compliance Standards:[“IEC 61000-4 series”,”EN 50155″]

    Integrating cutting-edge technology, the GE FANUC VMIVME-5565-010 Reflective Memory Node Card is a pivotal component in modern industrial automation systems, designed to deliver unparalleled performance in memory-intensive applications.

    Featuring 128 MB of high-speed DDR SDRAM, this card ensures swift data processing and exceptional memory management, critical for optimizing system efficiency and reliability in demanding environments.

    Equipped with a PCI Express x4 bus interface, it seamlessly integrates with contemporary computing architectures, enabling high-bandwidth data transfer and enhanced system performance.

    Engineered to withstand extreme temperatures ranging from -40°C to +70°C, this robust card ensures stable operation across diverse industrial settings, from freezing cold workshops to scorching hot manufacturing floors.

    Crafted with meticulous attention to detail, the VMIVME-5565-010 is housed in a compact yet durable 4U rackmount design, ensuring easy integration and efficient space utilization in complex system configurations.

    Backed by rigorous environmental certifications including UL, CE, and FCC, the card adheres to stringent safety and quality standards, providing peace of mind for users in compliance-sensitive industries.

GE FANUC VMIVME-5565-010 Reflective Memory Node Card




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